w i ndow 2 0 . 0 d i a . 2 4 . 6 2 4 . 8 d i a . 1 . 0 nom . 5 . 0 0 . 2 12 . 7 min . ? 0 . 5 1 2 . 0 nom . c a thod e & c ase ano de 19 . 0 26 . 5 26 . 1 dia . 2 0 ty p . SMP2000G-MV prelim. 7/97 semelab plc. telephone (01455) 556565. telex: 341927. fax (01455) 552612. mechanical data dimensions in mm. p.i.n. photodiode description the SMP2000G-MV is a large silicon p.i.n. photodiode incorporated in a hermetic metal can package. the electrical terminations are via 6 leads of diameter 0.018" on a pitch of 0.75" (two sets of three, +20). the cathode of the photodiode is electrically connected to the package. the large photodiode active area provides greater sensitivity than other devices, with a corresponding reduction in speed. the photodiode structure has been optimised for high sensitivity, light measurement and calibration applications. the metal can and optional screening mesh ensure a rugged device with a high degree of immunity to radiated electrical interference. to-m package operating temperature range storage temperature range temperature coefficient of responsively temperature coefficient of dark current reverse breakdown voltage -40c to +70c -45c to +80c 0.35% per c x2 per 8c rise 60v absolute maximum ratings (t case = 25c unless otherwise stated) features ? highest sensitivity ? excellent linearity ? 100mm 2 active area ? wide spectral response ? integral optical filter option note 1 ? to-m hermetic metal can package ? emi screening mesh available note 1 contact semelab plc for filter options
SMP2000G-MV prelim. 7/97 semelab plc. telephone (01455) 556565. telex: 341927. fax (01455) 552612. characteristic t est conditions. min. t yp. max. units responsiv ely activ e area dar k current breakdo wn v oltage capacitance rise time nep l at 900nm e = 0 dar k 1v re v erse e = 0 dar k 10v re v erse e = 0 dar k 10a re v erse e = 0 dar k 0v re v erse e = 0 dar k 20v re v erse 30v re v erse 50 w 900nm 0.45 0.55 100 12 60 80 1800 200 19 30x10 -14 a/w mm 2 na v pf ns w/ ? hz chara cteristics (t amb =25c unless otherwise stated) d i r e c t i o n a l c h a r a c t e r i s t i c s 0 . 2 0 . 3 0 . 4 0 . 5 0 . 6 0 . 7 0 . 8 0 . 9 1 normalised incident power d i r e c t i o n a l c h a r a c t e r i s t i c s 0 0 . 2 0 . 4 0 . 6 0 . 8 1 0 0 . 2 0 . 4 0 . 6 0 . 8 1 n o r m a l i s e d i n c i d e n t p o w e r 1 0 2 0 3 0 4 0 5 0 6 0 7 0 8 0 a n g l e f r o m s e n s o r t o i l l u m i n a t i o n s p e c t r a l r e s p o n s e 0 2 0 4 0 6 0 8 0 1 0 0 0 2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 1 2 0 0 w a v e l e n g t h ( n m ) relative responsivity (%)
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